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Intel Reveals Three Future Chip Technologies: CFET, GaN-Silicon Integration, and Ruthenium Interconnects

Intel has publicly highlighted three foundational technologies it is betting on for future chip generations: Complementary Field-Effect Transistors (CFET), monolithic integration of Gallium Nitride with silicon, and ruthenium-based metal interconnects. Each addresses a distinct scaling bottleneck — transistor density, power efficiency, and wiring resistance — as the industry pushes beyond current gate-all-around node limits. Together, they signal Intel's strategy to remain competitive in both logic and power semiconductor manufacturing.